The wide safe operating area of field effect transistor improves its applicability in harsh environments from multiple dimensions.
The current amplification factor reflects the triode's ability to amplify current, while temperature changes will change the characteristics of the triode's internal PN junction and the carrier mobility.
In modern electronic technology, field effect transistor (MOSFET) is widely used due to its advantages such as high efficiency, low power consumption and easy integration.
The difference in β values of paired triodes should be controlled within 5% to reduce distortion caused by inconsistent parameters.
Field effect transistors (Field-Effect Transistor, FET) have become core components in many industrial automation systems due to their high efficiency, low power consumption and high reliability.
Especially in the processing of sensitive signals, triode has become an indispensable core component with its unique current amplification, switching characteristics and frequency response capabilities.